lead (pb)-free version is rohs compliant si4435dy vishay siliconix document number: 70149 s-51472?rev. g, 01-aug-05 www.vishay.com 1 p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.02 @ v gs = ?10 v ?8.0 ?30 0.035 @ v gs = ?4.5 v ?6.0 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 ordering information: si4435dy -t1?rev a si4435dy-t1?a?e3 (lead (pb)-free) s g d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds ?30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d ?8.0 continuous drain current (t j = 150 c) a t a = 70 c i d ?6.4 a pulsed drain current i dm ?50 a continuous source current (diode conduction) a i s ?2.1 maximum power dissipation a t a = 25 c p d 2.5 w maximum power dissipation a t a = 70 c p d 1.6 w operating junction and storage temperature range t j , t stg ?55 to 150 c
parameter symbol limit unit maximum junction-to-ambient a r thja 50 c/w notes a. surface mounted on fr4 board, t 10 sec. for spice model information via the w orldwide web: http://www.vishay .com/www/product/spice.htm
si4435dy vishay siliconix www.vishay.com 2 document number: 70149 s-51472?rev. g, 01-aug-05
parameter symbol test condition min typ a max unit static gate threshold voltage v gs(th) v ds = v gs , i d = ?250 a ?1.0 ?2.0 ?3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = ?30 v, v gs = 0 v ?1 a zero gate voltage drain current i dss v ds = ?30 v, v gs = 0 v, t j = 70 c ?5 a on state drain current b i d( ) v ds ?5 v, v gs = ?10 v ?40 a on-state drain current b i d(on) v ds ?5 v, v gs = ?4.5 v ?10 a drain source on state resistance b r ds( ) v gs = ?10 v, i d = ?8.0 a 0.015 0.02 drain-source on-state resistance b r ds(on) v gs = ?4.5 v, i d = ?5.0 a 0.022 0.035 forward transconductance b g fs v ds = ?15 v, i d = ?8.0 a 20 s diode forward voltage b v sd i s = ?2.1 a, v gs = 0 v ?0.75 ?1.2 v dynamic a total gate charge q g 47 60 gate-source charge q gs v ds = ?15 v, v gs = ?10 v, i d = ?4.6 a 9.5 nc gate-drain charge q gd 8 gate resistance r g 2.75 4.1 turn-on delay time t d(on) 16 30 rise time t r v dd = ?15 v, r l = 15 17 30 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d ?1 a, v gen = ?10 v, r g = 6 75 120 ns fall time t f 31 80 source-drain reverse recovery time t rr i f = ?2.1 a, di/dt = 100 a/ s 40 80 notes a. guaranteed by design, not subject to production testing. values shown are for product revision a. b. pulse test; pulse width 300 s, duty cycle 2%. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for exte nded periods may affect device reliability.
si4435dy vishay siliconix document number: 70149 s-51472?rev. g, 01-aug-05 www.vishay.com 3
r ds(on) ? on-resistance (normalized) 0 10 20 30 40 50 0123456 0 900 1800 2700 3600 4500 0 6 12 18 24 30 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 ?25 0 25 50 75 100 125 150 0 10 20 30 40 50 0246810 0 2 4 6 8 10 0 1020304050 0.000 0.025 0.050 0.075 0.100 0.125 0.150 0 1020304050 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs = 10 thru 5 v 3 v 4 v v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 4.6 a ? on-resistance ( r ds(on) ? ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v gs = 10 v i d = 8.0 a t j ? junction temperature ( c) v gs = 10 v v gs = 4.5 v 25 c t c = -55 c 125 c
si4435dy vishay siliconix www.vishay.com 4 document number: 70149 s-51472?rev. g, 01-aug-05
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ?4 10 ?3 10 ?2 10 ?1 110 normalized effective transient thermal impedance 30 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 50 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm power (w) 0 20 40 60 80 0.01 0.10 1.00 10.00 single pulse power ?0.6 ?0.4 ?0.2 ?0.0 0.2 0.4 0.6 0.8 ?50 ?25 0 25 50 75 100 125 150 0.00 0.02 0.04 0.06 0.08 0.10 0246810 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage threshold v oltage ? on-resistance ( r ds(on) ? ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s t j ? temperature ( c) variance (v) v gs(th) t j = 150 c t j = 25 c i d = 8.0 a i d = 250 a 30 10 1 time (sec) vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?70149 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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